Title :
Latchup immunity and well profile design by a deep carbon-doped layer
Author :
Heinemann, B. ; Barth, R. ; Bolze, D. ; Ehwald, K.-E. ; Knoll, D. ; Kruger, D. ; Kurps, R. ; Rucker, H. ; Schley, P. ; Tillack, B. ; Wolansky, D.
Author_Institution :
IHP, Frankfurt, Germany
Abstract :
We show that good latchup immunity and RF characteristics can be achieved by a deeply buried carbon-doped layer on p substrate. The inserted layer stack allows more flexible design of well doping profiles, thus reducing sheet resistances and parasitic capacitances, while maintaining CMOS device performance and design flexibility.
Keywords :
CMOS integrated circuits; ULSI; capacitance; carbon; doping profiles; elemental semiconductors; field effect MMIC; integrated circuit reliability; leakage currents; mixed analogue-digital integrated circuits; silicon; CMOS device performance; RF characteristics; Si:C; design flexibility; inserted layer stack; latchup immunity; parasitic capacitances; sheet resistances; well doping profiles; well profile design; Annealing; Anodes; BiCMOS integrated circuits; Cobalt; Conductivity; Doping; Fabrication; Implants; MOS devices; Measurement techniques;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904358
