Latchup immunity and well profile design by a deep carbon-doped layer

Author

Heinemann, B. ; Barth, R. ; Bolze, D. ; Ehwald, K.-E. ; Knoll, D. ; Kruger, D. ; Kurps, R. ; Rucker, H. ; Schley, P. ; Tillack, B. ; Wolansky, D.

Author_Institution

IHP, Frankfurt, Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

471

Lastpage

474

Abstract

We show that good latchup immunity and RF characteristics can be achieved by a deeply buried carbon-doped layer on p substrate. The inserted layer stack allows more flexible design of well doping profiles, thus reducing sheet resistances and parasitic capacitances, while maintaining CMOS device performance and design flexibility.

Keywords

CMOS integrated circuits; ULSI; capacitance; carbon; doping profiles; elemental semiconductors; field effect MMIC; integrated circuit reliability; leakage currents; mixed analogue-digital integrated circuits; silicon; CMOS device performance; RF characteristics; Si:C; design flexibility; inserted layer stack; latchup immunity; parasitic capacitances; sheet resistances; well doping profiles; well profile design; Annealing; Anodes; BiCMOS integrated circuits; Cobalt; Conductivity; Doping; Fabrication; Implants; MOS devices; Measurement techniques;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904358

Filename

904358

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2885940