Title :
An experimental 4Mb CMOS DRAM
Author :
Furuyama, Toshiya ; Ohsawa, Takashi ; Watanabe, Yoshihiro ; Ishiuchi, H. ; Tanaka, T. ; Ohuchi, Kouji ; Tango, H. ; Natori, K. ; Ozawa, O.
Author_Institution :
Toshiba Semiconductor Device Engineering Laboratory/VLSI Reseach Center, Kawasaki, Japan
Keywords :
CMOS process; CMOS technology; Capacitance; Capacitors; Circuit noise; Circuit testing; Random access memory; Read-write memory; Very large scale integration; Wiring;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1157013
