DocumentCode :
2885960
Title :
A 4Mb DRAM with half internal-voltage bitline precharge
Author :
Takada, Masumi ; Takeshima, Toshiaki ; Sakamoto, Makoto ; Shimizu, Tsuyoshi ; Abiko, Hiroshi ; Katoh, T. ; Kikuchi, Masashi ; Takahashi, Satoshi ; Sato, Yuuki ; Inoue, Yasuyuki
Author_Institution :
NEC Corporation, Kawasaki, Japan
Volume :
XXIX
fYear :
1986
fDate :
19-21 Feb. 1986
Firstpage :
270
Lastpage :
271
Keywords :
Assembly; Capacitance; Circuits; Clocks; Electrodes; MOS devices; National electric code; Random access memory; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1986.1157014
Filename :
1157014
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2885960
