DocumentCode
2885999
Title
A micromachining post-process module for RF silicon technology
Author
Pham, N.P. ; Ng, K.T. ; Bartek, M. ; Sarro, P.M. ; Rejaei, B. ; Burghartz, J.N.
Author_Institution
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
481
Lastpage
484
Abstract
A bulk-micromachining post-process module, based on two-level structuring of RF silicon substrates and a 4-/spl mu/m thick one-level sub-surface metal pattern, is presented. This allows for fabricating three-dimensional structures for novel RF components and has potential in more compact integration. Next to a concise description of the relevant aspects of the fabrication process, mechanical stability of the postprocessed wafers is analyzed. Sub-surface spiral inductors with good quality and low coupling to inductors built at the wafer surface are presented, thus demonstrating the feasibility of three-dimensional integration of RF components.
Keywords
MMIC; UHF integrated circuits; crosstalk; elemental semiconductors; etching; inductors; isolation technology; mechanical stability; micromachining; microstrip lines; silicon; transceivers; 4 micron; RF components; Si-SiO-SiN; bulk-micromachining post-process module; coupling; mechanical stability; one-level sub-surface metal pattern; postprocessed wafers; spiral inductors; three-dimensional structures; two-level structuring; Crosstalk; Etching; Fabrication; Inductors; Micromachining; Microstrip; Radio frequency; Resists; Silicon compounds; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904360
Filename
904360
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