DocumentCode :
2886056
Title :
High-Q VHF micromechanical contour-mode disk resonators
Author :
Clark, J.R. ; Wan-Thai Hsu ; Nguyen, C.T.-C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
493
Lastpage :
496
Abstract :
A micromechanical, laterally vibrating disk resonator, fabricated via a technology that combines polysilicon surface-micromachining and metal electroplating to attain submicron lateral capacitive gaps, has been demonstrated at frequencies approaching 160 MHz with Q´s as high as 9,400-the highest demonstrated to date for an on-chip resonator in this frequency range. This frequency also represents the highest to date for an electrostatically transduced micromechanical resonator and is an important step towards reaching the frequencies required by the RF front-ends in wireless transceivers. The geometric dimensions necessary to reach a given frequency are larger for this contour-mode than for the flexural-modes used by previous resonators. This, coupled with its unprecedented Q value, makes this disk resonator a choice candidate for use in the IF and RF stages of future miniaturized transceivers.
Keywords :
Q-factor; VHF oscillators; electroplating; land mobile radio; micromachining; micromechanical resonators; transceivers; 160 MHz; IF stage; Q value; RF stage; VHF; contour-mode; electrostatically transduced micromechanical resonator; geometric dimensions; laterally vibrating disk resonator; metal electroplating; micromechanical contour-mode disk resonators; miniaturized transceivers; polysilicon surface-micromachining; submicron lateral capacitive gaps; wireless transceivers; Bandwidth; Electrodes; Electrostatics; Micromechanical devices; Oscillators; Radio frequency; Resonant frequency; Resonator filters; Transceivers; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904363
Filename :
904363
Link To Document :
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