Title :
Recent advances in feature scale simulation
Author :
Kersch, A. ; Schulze Icking-Konert, G.
Author_Institution :
Infineon Technols. AG, Munich, Germany
Abstract :
Recent developments for the simulation of kinetic energy driven processes on the submicron scale are presented. Examples include the deposition of ions (IPVD), reactive ion etching (RIE), and ion enhanced chemical reactions (new model for high density plasma deposition). The simulation results are discussed and are found to be in good qualitative agreement with experimental measurements.
Keywords :
plasma deposition; semiconductor process modelling; sputter etching; vapour deposition; feature scale simulation; high density plasma deposition; ion enhanced chemical reaction; ionization physical vapor deposition; kinetic energy; reactive ion etching; semiconductor manufacturing; submicron processing; Automata; Cats; Chemical technology; Etching; Kinetic energy; Plasma measurements; Plasma simulation; Predictive models; Reflection; Surface topography;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904365
