Title :
Boron diffusion and activation in the presence of other species
Author :
Hong-Jyh Li ; Kohli, P. ; Ganguly, S. ; Kirichenko, T.A. ; Zeitzoff, P. ; Torres, K. ; Banerjee, S.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.
Keywords :
ab initio calculations; boron; diffusion; elemental semiconductors; semiconductor doping; silicon; Si:B; ab initio model; boron activation; boron diffusion; semiconductor doping; shallow junction; silicon wafer; Annealing; Boron; Capacitive sensors; Chaos; Equations; Implants; Ion implantation; Microelectronics; Semiconductor devices; Substrates;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904368
