Modeling of arsenic transient enhanced diffusion and background boron segregation in low-energy As/sup +/ implanted Si

Experimental results of As diffusion in B- and P-doped wafers revealed the formation of As-B pairs with small binding energy compared to P-B pairs. The existence of positively charged BI-pair and negatively charged PI-pair was confirmed by the experiments of B and P redistribution near the As-tail region where the internal electric field originating from ionized As atoms affect background P and B profiles. For low-energy As implantation background B atoms were found to segregate where no end-of-range dislocation loops exist.