DocumentCode
2886198
Title
The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown
Author
Alam, M.A. ; Weir, B.E. ; Silverman, P.J. ; Ma, Y. ; Hwang, D.
Author_Institution
Lucent Technols. Bell Labs., Murray Hill, NJ, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
529
Lastpage
532
Abstract
Soft and hard breakdown result from the statistical distribution of the percolation conductance, rather than any physical difference between the traps involved. The distribution obtained confirms some subtle and surprising predictions of the percolation model and shows that the effective trap-diameter is less than 1.5 nm. It also demonstrates that 1.5 nm oxides at 1 V can not undergo hard breakdown.
Keywords
electric breakdown; percolation; electric resistance; hard breakdown; percolation model; soft breakdown; statistical distribution; trap diameter; ultrathin oxide breakdown; Conductivity; Electric breakdown; Leakage current; MOSFETs; Microscopy; Power dissipation; Predictive models; Probes; Solid modeling; Statistical distributions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904372
Filename
904372
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