Title :
Substrate hole current origin after oxide breakdown
Author :
Rasras, M. ; De Wolf, I. ; Groeseneken, G. ; Degraeve, R. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The origin of the substrate hole currents after oxide breakdown is investigated using photon emission microscopy and spectral analysis of light which is emitted from the breakdown spots. It is demonstrated that, under positive gate bias, impact ionization of the electrons in the substrate is the dominant source of the substrate hole current and the light emission.
Keywords :
electric breakdown; impact ionisation; silicon compounds; SiO/sub 2/; gate oxide breakdown; impact ionization; light emission; photon emission microscopy; spectral analysis; substrate hole current; Anodes; Breakdown voltage; Charge carrier processes; Current measurement; Electric breakdown; Electron emission; MOSFET circuits; Microscopy; Spectral analysis; Stress;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904374
