Title :
Electron dynamics in n-doped In0.4Ga0.6As/GaAs quantum dot infrared detector structures
Author :
Wu, Z.-K. ; Choi, H. ; Norris, T.B. ; Chakrabarti, S. ; Su, X.H. ; Bhattacharya, P.
Author_Institution :
EECS Dept., Univ. of Michigan, Ann Arbor, MI
Abstract :
Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy directly reveals electron dynamics in n-doped quantum dots infrared detector structure. Capturing and intradot relaxation time were measured. Nanosecond-scale dynamics in the n=1 state was also observed.
Keywords :
gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; semiconductor quantum dots; In0.4Ga0.6As-GaAs; electron dynamics; intradot relaxation time; nanosecond scale dynamics; optical probe differential transmission spectroscopy; quantum dot infrared detector structures; time resolved mid infrared pump; Contacts; Electron optics; Gallium arsenide; Optical pulse generation; Optical pulses; Optical scattering; Pulse amplifiers; Quantum dots; Substrates; Ultrafast optics; (040.3060) Infrared; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4629131
