Title :
Impact of MOSFET oxide breakdown on digital circuit operation and reliability
Author :
Kaczer, B. ; Degraeve, R. ; Groeseneken, G. ; Rasras, M. ; Kubicek, S. ; Vandamme, E. ; Badenes, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We demonstrate that many gate oxide breakdowns can occur in parts of a digital circuit without affecting its overall logical function. This implies that if maintaining the circuit´s logical functionality is the sufficient reliability criterion, the present reliability specifications are excessively stringent.
Keywords :
MOSFET; MOSFET circuits; logic circuits; semiconductor device breakdown; semiconductor device reliability; MOSFET; digital circuit; gate oxide breakdown; logic function; reliability; CMOS technology; Dielectric breakdown; Digital circuits; Electric breakdown; FETs; Frequency conversion; MOSFET circuits; Maintenance; Ring oscillators; Stress;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904379
