DocumentCode :
28866
Title :
A good fit
Author :
Davies, D.
Author_Institution :
IET, Stevenage, UK
Volume :
49
Issue :
7
fYear :
2013
fDate :
March 28 2013
Firstpage :
437
Lastpage :
437
Abstract :
A US-based team have expanded their model of III-V materials interfaces to include series resistance and dielectric leakage behaviour.
Keywords :
III-V semiconductors; dielectric materials; leakage currents; III-V materials interfaces; dielectric leakage behaviour; semiconductor materials; series resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.0874
Filename :
6504949
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=28866
