Application of metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to active-matrix organic light-emitting diode displays

Author

Zhiguo Meng ; Haiying Chen ; Chengfeng Qiu ; Liduo Wang ; Kwok, H.S. ; Man Wong

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

611

Lastpage

614

Abstract

Active matrix (AM) flat-panel displays (FPDs) based on organic light-emitting diodes (OLEDs) are being hotly pursued as alternatives to liquid crystal displays (LCDs). Unlike LC pixels, which are voltage-driven, OLED pixels are current-driven, Since the amorphous silicon (a-Si) thin-film transistors (TFTs) typically used in LCDs suffer from limited current-driving capability and high photosensitivity, polycrystalline silicon (poly-Si) TFTs based on metal-induced unilateral crystallization (MIUC) of a-Si are investigated for AMOLED displays. Particular attention is paid to (1) optimizing TFT structural design and (2) resolving issues related to the integration of MIUC TFT and OLED.

Keywords

LED displays; crystallisation; driver circuits; elemental semiconductors; flat panel displays; silicon; thin film transistors; AMOLED displays; MIUC; OLED pixels; Si; TFT structural design; active-matrix organic light-emitting diode displays; current-driving capability; flat-panel displays; metal-induced unilaterally crystallized material; polysilicon thin-film transistor; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Amorphous silicon; Crystallization; Design optimization; Flat panel displays; Liquid crystal displays; Organic light emitting diodes; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904394

Filename

904394