A Precise Resistance Tracing Technique for a Toggle Mode MRAM Evaluation

Author

Katoh, Y. ; Tsuji, K. ; Hada, H. ; Kasai, N.

Author_Institution

NEC Corp., Sagamihara

fYear

2007

fDate

19-22 March 2007

Firstpage

51

Lastpage

54

Abstract

A precise evaluation technique was created for developing magnetic random access memory (MRAM), especially memory that operates in a toggle-writing mode. This technique enables us to observe the detailed resistance transition of magnetic tunneling junction (MTJ) cells during complicated write operations. It was used to analyze failed cells and revealed that the MTJ characteristics in the third quadrant are significantly related to disturb robustness in megabit MRAM. We found our technique to be a powerful method of failure analysis and essential to accelerating MRAM development.

Keywords

magnetic storage; magnetic tunnelling; magnetoresistance; random-access storage; MTJ characteristics; failed cells analysis; giant magnetoresistance; magnetic memories; magnetic random access memory; magnetic tunneling junction cells; magnetization reversal; megabit MRAM; precise evaluation technique; precise resistance tracing technique; toggle writing mode MRAM; Circuits; Failure analysis; Magnetic field measurement; Magnetic fields; Magnetic separation; Magnetic tunneling; Magnetization; Random access memory; Switches; Voltage; Giant magnetoresistance; Magnetic memories; Magnetization reversal; Measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374453

Filename

4252403