• DocumentCode
    2886666
  • Title

    A 60 A, To-220 - Packaged, Failure-Safed GTO Thyristor

  • Author

    Silard, Andrei P.

  • Author_Institution
    Department of Electronics Polytechnic Institute, Bucharest, O.P.16, 76206 Romania
  • fYear
    1984
  • fDate
    4-7 Nov. 1984
  • Firstpage
    225
  • Lastpage
    231
  • Abstract
    The work reports the development of a failure-safe, TO-220-packaged, high-voltage double-interdigitated (TIL) GTO thyristor, capable of turning-off a peak anode current IATO = 60 A. The active cathode-emitter area of the devices is 0.08 cm2. The peak interruptable anode current of developed TIL GTOs is the highest value of IATO ever reported in the open literature for this class of GTO devices (identical device area and case). The TIL GTO devices were tested under the heaviest possible on-state power dissipation conditions. The safe-operating value of IATO was still 60 A, which exceeds even the non-repetitive peak on-state current ITSM of these devices (50 A). It was concluded from testings that ultimate limits of IATO are dictated by the specific thermal ratings, the thermal impedance junction-to-case Zth j-c of TO-220 packages included. The enhanced current-handling capability of TIL GTOs is mirrored by the safe operation of devices at high commutation frequency under heavy load conditions. It should be noted that the developed devices possess an excellent turn-on sensitivity accompanied by a high immunity to noise (high dV/dt-capability).
  • Keywords
    Anodes; Fingers; Frequency; Impedance; Packaging; Power dissipation; Power semiconductor devices; Testing; Thermal loading; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 1984. INTELEC '84. International
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/INTLEC.1984.4794128
  • Filename
    4794128