DocumentCode :
2886666
Title :
A 60 A, To-220 - Packaged, Failure-Safed GTO Thyristor
Author :
Silard, Andrei P.
Author_Institution :
Department of Electronics Polytechnic Institute, Bucharest, O.P.16, 76206 Romania
fYear :
1984
fDate :
4-7 Nov. 1984
Firstpage :
225
Lastpage :
231
Abstract :
The work reports the development of a failure-safe, TO-220-packaged, high-voltage double-interdigitated (TIL) GTO thyristor, capable of turning-off a peak anode current IATO = 60 A. The active cathode-emitter area of the devices is 0.08 cm2. The peak interruptable anode current of developed TIL GTOs is the highest value of IATO ever reported in the open literature for this class of GTO devices (identical device area and case). The TIL GTO devices were tested under the heaviest possible on-state power dissipation conditions. The safe-operating value of IATO was still 60 A, which exceeds even the non-repetitive peak on-state current ITSM of these devices (50 A). It was concluded from testings that ultimate limits of IATO are dictated by the specific thermal ratings, the thermal impedance junction-to-case Zth j-c of TO-220 packages included. The enhanced current-handling capability of TIL GTOs is mirrored by the safe operation of devices at high commutation frequency under heavy load conditions. It should be noted that the developed devices possess an excellent turn-on sensitivity accompanied by a high immunity to noise (high dV/dt-capability).
Keywords :
Anodes; Fingers; Frequency; Impedance; Packaging; Power dissipation; Power semiconductor devices; Testing; Thermal loading; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunications Energy Conference, 1984. INTELEC '84. International
Conference_Location :
New Orleans, LA, USA
Type :
conf
DOI :
10.1109/INTLEC.1984.4794128
Filename :
4794128
Link To Document :
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