DocumentCode
2886666
Title
A 60 A, To-220 - Packaged, Failure-Safed GTO Thyristor
Author
Silard, Andrei P.
Author_Institution
Department of Electronics Polytechnic Institute, Bucharest, O.P.16, 76206 Romania
fYear
1984
fDate
4-7 Nov. 1984
Firstpage
225
Lastpage
231
Abstract
The work reports the development of a failure-safe, TO-220-packaged, high-voltage double-interdigitated (TIL) GTO thyristor, capable of turning-off a peak anode current IATO = 60 A. The active cathode-emitter area of the devices is 0.08 cm2. The peak interruptable anode current of developed TIL GTOs is the highest value of IATO ever reported in the open literature for this class of GTO devices (identical device area and case). The TIL GTO devices were tested under the heaviest possible on-state power dissipation conditions. The safe-operating value of IATO was still 60 A, which exceeds even the non-repetitive peak on-state current ITSM of these devices (50 A). It was concluded from testings that ultimate limits of IATO are dictated by the specific thermal ratings, the thermal impedance junction-to-case Zth j-c of TO-220 packages included. The enhanced current-handling capability of TIL GTOs is mirrored by the safe operation of devices at high commutation frequency under heavy load conditions. It should be noted that the developed devices possess an excellent turn-on sensitivity accompanied by a high immunity to noise (high dV/dt-capability).
Keywords
Anodes; Fingers; Frequency; Impedance; Packaging; Power dissipation; Power semiconductor devices; Testing; Thermal loading; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 1984. INTELEC '84. International
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/INTLEC.1984.4794128
Filename
4794128
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