DocumentCode
2886697
Title
Fabrication and characterization of cathodoluminescent devices made using porous silicon as a cold-cathode field emitter
Author
Elqaq, D.H. ; Hasan, M.-A.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina Univ., Charlotte, NC, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
627
Lastpage
629
Abstract
A cost efficient, easy to fabricate cathodoluminescent (CL) device that utilizes porous silicon (Si) as a high-density field emitter in a vacuumless layered structure, was fabricated and tested. The structure consists of a porous Si substrate capped with three layers: an active phosphor layer, an insulating layer and a transparent indium-tin-oxide electrode. Electrons emitted from protrusions in porous Si are accelerated toward the phosphor layer where light is generated both upon impact ionization of activator atoms and due to further ballistic acceleration of electrons within the phosphor layer.
Keywords
cathodoluminescence; electron field emission; elemental semiconductors; luminescent devices; porous semiconductors; silicon; vacuum microelectronics; Si; active phosphor layer; cathodoluminescent device; cold-cathode field emitter; impact ionization; insulating layer; porous silicon; transparent ITO electrode; Acceleration; Costs; Electrodes; Electron emission; Fabrication; Impact ionization; Insulation; Phosphors; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904398
Filename
904398
Link To Document