DocumentCode :
2886697
Title :
Fabrication and characterization of cathodoluminescent devices made using porous silicon as a cold-cathode field emitter
Author :
Elqaq, D.H. ; Hasan, M.-A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina Univ., Charlotte, NC, USA
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
627
Lastpage :
629
Abstract :
A cost efficient, easy to fabricate cathodoluminescent (CL) device that utilizes porous silicon (Si) as a high-density field emitter in a vacuumless layered structure, was fabricated and tested. The structure consists of a porous Si substrate capped with three layers: an active phosphor layer, an insulating layer and a transparent indium-tin-oxide electrode. Electrons emitted from protrusions in porous Si are accelerated toward the phosphor layer where light is generated both upon impact ionization of activator atoms and due to further ballistic acceleration of electrons within the phosphor layer.
Keywords :
cathodoluminescence; electron field emission; elemental semiconductors; luminescent devices; porous semiconductors; silicon; vacuum microelectronics; Si; active phosphor layer; cathodoluminescent device; cold-cathode field emitter; impact ionization; insulating layer; porous silicon; transparent ITO electrode; Acceleration; Costs; Electrodes; Electron emission; Fabrication; Impact ionization; Insulation; Phosphors; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904398
Filename :
904398
Link To Document :
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