• DocumentCode
    2886697
  • Title

    Fabrication and characterization of cathodoluminescent devices made using porous silicon as a cold-cathode field emitter

  • Author

    Elqaq, D.H. ; Hasan, M.-A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina Univ., Charlotte, NC, USA
  • fYear
    2000
  • fDate
    10-13 Dec. 2000
  • Firstpage
    627
  • Lastpage
    629
  • Abstract
    A cost efficient, easy to fabricate cathodoluminescent (CL) device that utilizes porous silicon (Si) as a high-density field emitter in a vacuumless layered structure, was fabricated and tested. The structure consists of a porous Si substrate capped with three layers: an active phosphor layer, an insulating layer and a transparent indium-tin-oxide electrode. Electrons emitted from protrusions in porous Si are accelerated toward the phosphor layer where light is generated both upon impact ionization of activator atoms and due to further ballistic acceleration of electrons within the phosphor layer.
  • Keywords
    cathodoluminescence; electron field emission; elemental semiconductors; luminescent devices; porous semiconductors; silicon; vacuum microelectronics; Si; active phosphor layer; cathodoluminescent device; cold-cathode field emitter; impact ionization; insulating layer; porous silicon; transparent ITO electrode; Acceleration; Costs; Electrodes; Electron emission; Fabrication; Impact ionization; Insulation; Phosphors; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-6438-4
  • Type

    conf

  • DOI
    10.1109/IEDM.2000.904398
  • Filename
    904398