DocumentCode :
2886717
Title :
Rapid Characterization of Threshold Voltage Fluctuation in MOS Devices
Author :
Agarwal, K. ; Nassif, S. ; Liu, F. ; Hayes, J. ; Nowka, K.
Author_Institution :
IBM Corp., Austin
fYear :
2007
fDate :
19-22 March 2007
Firstpage :
74
Lastpage :
77
Abstract :
We present a technique for fast characterization of random threshold voltage variation in MOS devices. Our Vtau scatter characterization method measures threshold voltage shift by monitoring the change in gate-to-source voltage VGS for a fixed drain current IDs and drain-to-source voltage VDS. We measure VGS variation for a large set of devices arranged in an individually addressable array and report results of Vtau scatter measurement from a test chip in a 65 nm SOI CMOS process. We also measure and report the magnitude of local device current mismatch caused by the Vtau fluctuation.
Keywords :
CMOS integrated circuits; MOSFET; arrays; fluctuations; integrated circuit testing; semiconductor device measurement; semiconductor device testing; stochastic processes; system-on-chip; voltage measurement; MOS devices; MOSFET; SOI CMOS process; drain-to-source voltage; fixed drain current; gate-to-source voltage monitoring; individual addressable array; local device current mismatch; random threshold voltage fluctuation characterization; size 65 nm; stochastic distribution; threshold voltage shift; voltage scatter characterization method; Current measurement; Fluctuations; Intrusion detection; MOS devices; Monitoring; Scattering; Semiconductor device measurement; Testing; Threshold voltage; Voltage measurement; MOSFET; Random dopant fluctuation; process variation; test array; threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0780-X
Type :
conf
DOI :
10.1109/ICMTS.2007.374458
Filename :
4252408
Link To Document :
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