Title :
Understanding the Carbon Impact on Si/SiGe:C HBT Base Current Mismatch
Author :
Danaie, Stephane ; Marin, Mario ; Ghibaudo, Gerard ; Vildeuil, J.-C. ; Chouteau, S. ; Sicard, Isabelle ; Monroy
Author_Institution :
STMicroelectron., Crolles
Abstract :
In this paper, we have investigated the impact of the carbon concentration on bipolar transistor matching at medium current region. Original base current matching results, obtained from the characterization of two carbon concentration splits in a SiGe:C BiCMOS technology, are first discussed and well interpreted by a new base current mismatch physical model. Our assumptions are also confirmed by a matching characterization of bipolar transistors subjected to a hot carrier injection (HCI) stress.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; electric current; heterojunction bipolar transistors; semiconductor device models; silicon; BiCMOS technology; HBT base current mismatch; Si-SiGe:C; base current mismatch physical model; bipolar transistor matching; carbon concentration impact; hot carrier injection stress; medium current region; BiCMOS integrated circuits; Bipolar transistors; Carbon dioxide; Cutoff frequency; Heterojunction bipolar transistors; Hot carrier injection; Human computer interaction; Microelectronics; Stress; Testing;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374460
