Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below

Constant downscaling of transistors leads to increase the relative difference between L_mask and L_eff. Effective length (L_eff) extractions are now crucial to avoid calculations errors on parameters such as the mobility, which can exceed 100% for shorter devices. We propose an industrially-adapted method to extract L_eff by using an enhanced "split C-V" method. Accurate and consistent values have been extracted (plusmn1 nm) and then correlated to mobility and HCI lifetime studies, as a function of L_eff.