Title :
Conformable formation of high quality ultra-thin amorphous Ta/sub 2/O/sub 5/ gate dielectrics utilizing water assisted deposition (WAD) for sub 50 nm damascene metal gate MOSFETs
Author :
Inumiya, S. ; Morozumi, Y. ; Yagishita, A. ; Saito, T. ; Gao, D. ; Choi, D. ; Hasebe, K. ; Suguro, K. ; Tsunashima, Y. ; Arikado, T.
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
A conformable formation process of ultra-thin Ta/sub 2/O/sub 5/ gate dielectrics, which is applicable to 50 nm damascene gate MOSFETs, was developed. Assisted by H/sub 2/O, perfect conformability was successfully realized even in the narrow gate groove (50 nm), while maintaining a low gate leakage. An excellent device performance of S-factor 72 mV/decade was obtained in 90 nm MOSFET with amorphous Ta/sub 2/O/sub 5/ gate dielectrics of T/sub eff/ 1.6 nm.
Keywords :
CVD coatings; MOSFET; conformal coatings; dielectric thin films; tantalum compounds; 50 nm; S-factor; Ta/sub 2/O/sub 5/; conformable formation; damascene metal gate MOSFET; ultrathin amorphous Ta/sub 2/O/sub 5/ gate dielectric; water assisted deposition; Amorphous materials; Delay; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; MOSFETs; Rough surfaces; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904403
