Faster ESD device characterization with wafer-level HBM

Author

Scholz, M. ; Trémoullies, D. ; Linten, D. ; Rolain, Y. ; Pintelon, R. ; Sawada, M. ; Nakaei, T. ; Hasebe, T. ; Groeseneken, G.

Author_Institution

IMEC, Leuven

fYear

2007

fDate

19-22 March 2007

Firstpage

93

Lastpage

96

Abstract

HBM testers are tools for ESD product qualification whereas TLP testers are used for device characterization. The ability to extract TLP-like IV curves from an HBM system is demonstrated in this paper. Together with measurement results on wafer-level, the full methodology is presented and compared to standard 100 ns TLP measurements. The advantage of this methodology is that the quasi-static characteristic of a ESD protection device can be obtained much faster and with only one test procedure.

Keywords

electrostatic discharge; protection; semiconductor device measurement; semiconductor device models; semiconductor device testing; ESD device characterization; ESD product qualification; ESD protection device; TLP-like IV curves; human body model; quasistatic characteristics; transmission line pulse testing; wafer-level HBM testers; Calibration; Current measurement; Current transformers; Electronic equipment testing; Electrostatic discharge; Frequency measurement; Probes; Qualifications; Stress; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374462

Filename

4252412