Title :
High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide
Author :
Osten, H.J. ; Liu, J.P. ; Gaworzewski, P. ; Bugiel, E. ; Zaumseil, P.
Author_Institution :
IHP, Frankfurt, Germany
Abstract :
We show that crystalline praseodymium oxide films of the Pr/sub 2/O/sub 3/-type grown on Si(100) have outstanding dielectric properties, displaying a dielectric constant of 31 independent of substrate doping, ultra-low leakage current density of 5/spl times/10/sup -9/ A/cm/sup 2/ at V/sub g/=/spl plusmn/1.0 V @ EOT=14 /spl Aring/, good reliability, and reversible electrical breakdown. Thin Pr/sub 2/O/sub 3/ layers survive anneals of up to 1000/spl deg/C for 15 seconds with no degradation in electrical properties.
Keywords :
annealing; dielectric thin films; electric breakdown; leakage currents; permittivity; praseodymium compounds; 1000 C; Pr/sub 2/O/sub 3/; Si(100) substrate; annealing; dielectric constant; electrical breakdown; high-k gate dielectric; leakage current; praseodymium oxide crystalline film; reliability; Amorphous materials; Annealing; Crystallization; Dielectric breakdown; Dielectric constant; Dielectric substrates; Doping; Electric breakdown; Leakage current; Semiconductor films;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904404
