DocumentCode
2886823
Title
A notched metal gate MOSFET for sub-0.1 /spl mu/m operation
Author
Pidin, S. ; Mushiga, M. ; Shido, H. ; Yamamoto, T. ; Sambonsugi, Y. ; Tamura, Y. ; Sugii, T.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
659
Lastpage
662
Abstract
We demonstrate a notched W/TiN gate MOSFET for which both threshold voltage adjustment and suppression of the short channel effect are achieved simultaneously. To lower the threshold voltage, low channel doping concentration and high dose-low energy counter-doping are combined with high-dose tilted pocket implant performed using notched gate. Due to presence of notches, near optimal pocket implant distribution in the channel is achieved.
Keywords
MOSFET; doping profiles; ion implantation; titanium compounds; tungsten; 0.1 micron; W-TiN; channel doping; counter-doping; notched metal gate MOSFET; pocket implant distribution; short channel effect; threshold voltage; Capacitance; Implants; MOSFET circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904405
Filename
904405
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