Title :
Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) with low threshold voltage, high drive current, and uniform electrical characteristics
Author :
Yagishita, A. ; Saito, T. ; Inumiya, S. ; Matsuo, K. ; Tsunashima, Y. ; Suguro, K. ; Arikado, T.
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (0.7 V). By using this technology, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with mid-gap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).
Keywords :
MOSFET; low-power electronics; 0.7 V; Al-TiN; W-TiN; drive current; dynamic threshold voltage damascene metal gate MOSFET; electrical characteristics; low-voltage operation; subthreshold swing; threshold voltage; work function; Boron; CMOS technology; Degradation; Electric variables; Low voltage; MOSFET circuits; Metal-insulator structures; Silicon; Threshold voltage; Tin;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904406
