• DocumentCode
    2886848
  • Title

    Analog characterization of dielectric relaxation of MIM capacitor using an improved recovery voltage technique

  • Author

    Ning, Zhenqiu ; Casier, Herman ; Gillon, Renaud ; Delecourt, H.-X. ; Tack, Dimitri ; De Vylder, Erwin ; Van Torre, Patrick ; Hegsted, Dan

  • Author_Institution
    AMI Semicond. Belgium bvba, Oudenaarde
  • fYear
    2007
  • fDate
    19-22 March 2007
  • Firstpage
    109
  • Lastpage
    114
  • Abstract
    Dielectric relaxation of capacitor plays an important role in determining the accuracy of analogue sampled-data systems that are based on charge storage, e.g. charge-redistribution A/D converters. To perform an accurate characterization of the dielectric relaxation of MIM capacitor, a technique based on voltage recovery principle has been developed, in which the effects of parasitic capacitance, leakage and mismatch on the characterization have been well minimized or canceled. The technique is proven to be highly accurate and flexible, while maintaining low cost.
  • Keywords
    MIM devices; capacitors; dielectric relaxation; electrical faults; electron device testing; recovery; sampled data systems; MIM capacitor; analog characterization; analogue sampled-data systems; charge storage; dielectric relaxation; metal-insulator-metal capacitor; parasitic capacitance; voltage recovery principle; Ambient intelligence; Circuit testing; Current measurement; Dielectric measurements; MIM capacitors; Parasitic capacitance; Performance evaluation; Switched capacitor circuits; Time measurement; Voltage measurement; Capacitors; Converters; Dielectric measurements; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    1-4244-0781-8
  • Electronic_ISBN
    1-4244-0781-8
  • Type

    conf

  • DOI
    10.1109/ICMTS.2007.374465
  • Filename
    4252415