DocumentCode
2886848
Title
Analog characterization of dielectric relaxation of MIM capacitor using an improved recovery voltage technique
Author
Ning, Zhenqiu ; Casier, Herman ; Gillon, Renaud ; Delecourt, H.-X. ; Tack, Dimitri ; De Vylder, Erwin ; Van Torre, Patrick ; Hegsted, Dan
Author_Institution
AMI Semicond. Belgium bvba, Oudenaarde
fYear
2007
fDate
19-22 March 2007
Firstpage
109
Lastpage
114
Abstract
Dielectric relaxation of capacitor plays an important role in determining the accuracy of analogue sampled-data systems that are based on charge storage, e.g. charge-redistribution A/D converters. To perform an accurate characterization of the dielectric relaxation of MIM capacitor, a technique based on voltage recovery principle has been developed, in which the effects of parasitic capacitance, leakage and mismatch on the characterization have been well minimized or canceled. The technique is proven to be highly accurate and flexible, while maintaining low cost.
Keywords
MIM devices; capacitors; dielectric relaxation; electrical faults; electron device testing; recovery; sampled data systems; MIM capacitor; analog characterization; analogue sampled-data systems; charge storage; dielectric relaxation; metal-insulator-metal capacitor; parasitic capacitance; voltage recovery principle; Ambient intelligence; Circuit testing; Current measurement; Dielectric measurements; MIM capacitors; Parasitic capacitance; Performance evaluation; Switched capacitor circuits; Time measurement; Voltage measurement; Capacitors; Converters; Dielectric measurements; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
1-4244-0781-8
Electronic_ISBN
1-4244-0781-8
Type
conf
DOI
10.1109/ICMTS.2007.374465
Filename
4252415
Link To Document