DocumentCode :
2886848
Title :
Analog characterization of dielectric relaxation of MIM capacitor using an improved recovery voltage technique
Author :
Ning, Zhenqiu ; Casier, Herman ; Gillon, Renaud ; Delecourt, H.-X. ; Tack, Dimitri ; De Vylder, Erwin ; Van Torre, Patrick ; Hegsted, Dan
Author_Institution :
AMI Semicond. Belgium bvba, Oudenaarde
fYear :
2007
fDate :
19-22 March 2007
Firstpage :
109
Lastpage :
114
Abstract :
Dielectric relaxation of capacitor plays an important role in determining the accuracy of analogue sampled-data systems that are based on charge storage, e.g. charge-redistribution A/D converters. To perform an accurate characterization of the dielectric relaxation of MIM capacitor, a technique based on voltage recovery principle has been developed, in which the effects of parasitic capacitance, leakage and mismatch on the characterization have been well minimized or canceled. The technique is proven to be highly accurate and flexible, while maintaining low cost.
Keywords :
MIM devices; capacitors; dielectric relaxation; electrical faults; electron device testing; recovery; sampled data systems; MIM capacitor; analog characterization; analogue sampled-data systems; charge storage; dielectric relaxation; metal-insulator-metal capacitor; parasitic capacitance; voltage recovery principle; Ambient intelligence; Circuit testing; Current measurement; Dielectric measurements; MIM capacitors; Parasitic capacitance; Performance evaluation; Switched capacitor circuits; Time measurement; Voltage measurement; Capacitors; Converters; Dielectric measurements; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
Type :
conf
DOI :
10.1109/ICMTS.2007.374465
Filename :
4252415
Link To Document :
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