Title :
Modeling the Mismatch of High-k MIM Capacitors
Author :
Marin, Mathieu ; Cremer, Sebastien ; Giraudin, Jean-Christophe ; Martinet, Bertrand
Author_Institution :
STMicroelectron., Crolles
Abstract :
In this contribution we investigate the matching properties of modern high-k metal-insulator-metal (MIM) capacitors. In particular, we derive a compact physics-based model in order to explain the observed geometry dependence of mismatch. This model is successfully applied to MIM devices processed with Ta2O5 and AI2O3 as dielectrics.
Keywords :
MIM devices; aluminium compounds; capacitors; dielectric materials; tantalum compounds; Al2O3; Ta2O5; compact physics-based model; dielectric MIM capacitors; high-k MIM capacitors; modern high-k metal-insulator-metal capacitors; Capacitance; Dielectric devices; Geometry; High K dielectric materials; High-K gate dielectrics; MIM capacitors; MIM devices; MOS capacitors; Solid modeling; Testing; MIM; Mismatch; capacitors; high-k dielectrics; matching; modeling;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0780-X
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374466
