• DocumentCode
    2886897
  • Title

    Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs

  • Author

    Anil, K.G. ; Mahapatra, S. ; Eisele, I.

  • Author_Institution
    Inst. of Phys., Univ. der Bundeswehr Munich, Neubiberg, Germany
  • fYear
    2000
  • fDate
    10-13 Dec. 2000
  • Firstpage
    675
  • Lastpage
    678
  • Abstract
    Impact ionization in n-channel MOSFETs for drain voltages (V/sub D/) below the bandgap voltages (qV/sub D/\n\n\t\t
  • Keywords
    MOSFET; impact ionisation; inversion layers; deep-sub-micron n-channel MOSFET; electron energy distribution; electron-electron interaction; inversion layer quantization; sub-bandgap impact ionization; Electrons; Energy measurement; Gain measurement; Impact ionization; MOSFETs; Photonic band gap; Physics; Quantization; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-6438-4
  • Type

    conf

  • DOI
    10.1109/IEDM.2000.904409
  • Filename
    904409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2886897