DocumentCode :
2886897
Title :
Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs
Author :
Anil, K.G. ; Mahapatra, S. ; Eisele, I.
Author_Institution :
Inst. of Phys., Univ. der Bundeswehr Munich, Neubiberg, Germany
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
675
Lastpage :
678
Abstract :
Impact ionization in n-channel MOSFETs for drain voltages (V/sub D/) below the bandgap voltages (qV/sub D/\n\n\t\t
Keywords :
MOSFET; impact ionisation; inversion layers; deep-sub-micron n-channel MOSFET; electron energy distribution; electron-electron interaction; inversion layer quantization; sub-bandgap impact ionization; Electrons; Energy measurement; Gain measurement; Impact ionization; MOSFETs; Photonic band gap; Physics; Quantization; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904409
Filename :
904409
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2886897
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