An 1.25 Gbit/s -29 dBm burst-mode optical receiver realized with 0.35 μm SiGe BiCMOS process using a PIN photodiode

Author

Chen, Chun-Chi ; Tsai, Chia-Ming ; Huang, Li-Ren

Author_Institution

SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

1

fYear

2004

fDate

6-9 Dec. 2004

Firstpage

313

Abstract

A 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35 μm SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7 pF PIN photodiode, the measured optical sensitivity for 1310 nm light achieves -29 dBm at 1.25 Gbps under BER of 10^-12. For burst-mode operation, the receiver provides fully differential output within 50 ns after the start of an optical burst.

Keywords

BiCMOS integrated circuits; optical receivers; p-i-n photodiodes; 0.35 micron; 1.25 Gbit/s; 1310 nm; BiCMOS process; OLT receiver; PIN photodiode; PON system; SiGe; burst-mode optical receiver; optical line terminal; optical sensitivity; passive optical network; BiCMOS integrated circuits; Germanium silicon alloys; Optical attenuators; Optical network units; Optical receivers; Optical sensors; Optical transmitters; PIN photodiodes; Passive optical networks; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8660-4

Type

conf

DOI

10.1109/APCCAS.2004.1412757

Filename

1412757