Title :
A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications
Author :
De Blauwe, J. ; Ostraat, M. ; Green, M.L. ; Weber, G. ; Sorsch, T. ; Kerber, A. ; Klemens, F. ; Cirelli, R. ; Ferry, E. ; Grazul, J.L. ; Baumann, F. ; Kim, Y. ; Mansfield, W. ; Bude, J. ; Lee, J.T.C. ; Hillenius, S.J. ; Flagan, R.C. ; Atwater, H.A.
Author_Institution :
Lucent Technol., Murray Hill, NJ, USA
Abstract :
This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>10/sup 5/ P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60 /spl Aring/). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.
Keywords :
MOSFET; aerosols; nanostructured materials; semiconductor storage; MOSFET; aerosol-nanocrystal floating-gate FET; electrical characteristics; fabrication; nonvolatile memory; structural characteristics; Aerosols; Costs; Crystallization; FETs; Fabrication; Furnaces; Nanocrystals; Nonvolatile memory; Oxidation; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904411
