A novel lateral overflow drain technology for high quantum efficiency CCD imagers

Author

Adachi, S. ; Simada, H. ; Gotoh, H. ; Mizobuchi, K.

Author_Institution

Texas Instrum. Japan, Ibaraki, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

693

Lastpage

696

Abstract

A novel antiblooming technology featuring a junction field effect transistor (JFET) in lateral directions has been developed for the high quantum efficiency CCD imagers. The lateral overflow drain (LOD) using a sub-0.2 /spl mu/m JFET has been fabricated and found to be shrinkable to sub-1 /spl mu/m /spl phi/ which corresponds to the 3 /spl mu/m pixel. The electrical performance has also been characterized by applying the new LOD to the sub-5 /spl mu/m pixel two-polysilicon electrodes virtual phase CCD (VPCCD). The antiblooming barrier has been simply controlled by the LOD drain bias. The superior antiblooming property has also been demonstrated even in the excessively bright light condition. The use of the new LOD for the VPCCD shows no significant degradation of the dark current.

Keywords

CCD image sensors; junction gate field effect transistors; 0.25 micron; CCD imager; antiblooming barrier; dark current; junction field effect transistor; lateral overflow drain technology; quantum efficiency; two-polysilicon electrodes virtual phase CCD; Charge coupled devices; Dark current; Degradation; Electrodes; Etching; FETs; Fabrication; Geometry; Instruments; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904413

Filename

904413