Title :
A Test Structure for Analysis of Asymmetry and Orientation Dependence of MOSFETs
Author :
Matsuda, T. ; Sugiyama, Y. ; Nohara, K. ; Morita, K. ; Iwata, H. ; Ohzone, T. ; Morishita, T. ; Komoku, K.
Author_Institution :
Toyama Prefectural Univ., Toyama
Abstract :
A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, only IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.
Keywords :
MOSFET; semiconductor device measurement; semiconductor device testing; MOSFET; asymmetrical characteristics; channel orientation; device asymmetry detection; interchanged source-drain measurements; test structure; Current measurement; Electric variables; Electrical resistance measurement; Information analysis; Information systems; MOSFET circuits; Microelectronics; Semiconductor device measurement; System testing; Systems engineering and theory; MOSFET; asymmetry; drain current; orientation dependence; substrate current;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374473
