Title :
Ultraviolet avalanche photodiode in CMOS technology
Author :
Pauchard, A. ; Rochas, A. ; Randjelovic, Z. ; Besse, P.A. ; Popovic, R.S.
Author_Institution :
Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is created using the lateral diffusion of two n/sub well/ regions separated by a gap of 0.6 /spl mu/m. Our photodiodes achieve a very low dark current of only 400 pA/mm/sup 2/, an excess noise F=7 for a mean gain =20 at /spl lambda/=400 nm, and a good gain uniformity.
Keywords :
CMOS integrated circuits; avalanche photodiodes; ultraviolet detectors; 400 nm; CMOS technology; dark current; excess noise; fabrication; gain; guard ring; lateral diffusion; ultraviolet avalanche photodiode; Anodes; Avalanche photodiodes; CMOS process; CMOS technology; Dark current; Doping; Fabrication; Marine technology; Sensor arrays; Solid scintillation detectors;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904417
