Title :
Methodology for performing RF reliability experiments on a generic test structure
Author :
Sasse, Guido T. ; De Vries, Rein J. ; Schmitz, Jurriaan
Author_Institution :
Univ. of Twente, Enschede
Abstract :
This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.
Keywords :
MIS devices; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; stress analysis; MOS device degradation; RF large voltage swing signal generation; RF reliability experiments; frequency dependency; gate-oxide wear out stress; generic test structure; on wafer experiments; Circuits; Degradation; Impedance; Performance evaluation; RF signals; Radio frequency; Signal generators; Stress; Testing; Voltage; RF; Reliability; large signal; oxide degradation;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374478
