Title :
Novel epitaxial p-Si/n-Si/sub 1-y/C/sub y//p-Si heterojunction bipolar transistors
Author :
Singh, D.V. ; Hoyt, J.L. ; Gibbons, J.F.
Author_Institution :
Solid State Electron. Lab., Stanford Univ., CA, USA
Abstract :
We report the fabrication and electrical characterization of the first pnp heterojunction bipolar transistors (HBTs) using a novel heterojunction system: Si/sub 1-y/C/sub y//Si (y/spl sim/0.01). Temperature dependent measurements of the collector intercept current for HBTs and Si control transistors are used to extract the Si/Si/sub 1-y/C/sub y/ bandgap difference, /spl Delta/E/sub g/ as a function of substitutional carbon fraction. These measurements are the first current-voltage extraction of the band gap reduction in Si/sub 1-y/C/sub y/, and confirm a band lineup that is more suitable for pnp HBT operation compared to Si/sub 1-x/Ge/sub x//Si. We also report what we believe are the most abrupt phosphorus doping profiles achieved using epitaxial techniques.
Keywords :
characteristics measurement; doping profiles; elemental semiconductors; energy gap; heterojunction bipolar transistors; semiconductor device measurement; semiconductor materials; silicon; silicon compounds; Si-SiC-Si; band gap reduction; band lineup; bandgap difference; collector intercept current; control transistors; current-voltage extraction; doping profiles; electrical characterization; heterojunction bipolar transistors; substitutional carbon fraction; temperature dependent measurements; Capacitive sensors; Conducting materials; Degradation; Doping; Heterojunction bipolar transistors; Photonic band gap; Silicon alloys; Statistics; Temperature dependence; Temperature measurement;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904426
