DocumentCode
2887192
Title
High-Q Slow-Wave Transmission Line for Chip Area Reduction on Advanced CMOS Processes
Author
Lai, Ivan C H ; Fujishima, Minoru
Author_Institution
Tokyo Univ., Chiba
fYear
2007
fDate
19-22 March 2007
Firstpage
192
Lastpage
195
Abstract
A slow-wave transmission line (SWTL) structure has been presented in earlier works for advanced CMOS processes. This structure has a high quality factor and low attenuation. It is now shown that this structure also allows slow-waves to propagate which results in a short wavelength for chip area-reduction. It is shown in this work, using test structures measurements, that the wavelength-reduction property can be varied by the coplanar dimensions of the lines. This structure is also designed to satisfy the stringent density requirements of advanced CMOS processes. Test structures were fabricated using CMOS 90 nm process technology with measurements made up to 110 GHz.
Keywords
CMOS integrated circuits; Q-factor; coplanar transmission lines; integrated circuit testing; slow wave structures; CMOS processes; chip area reduction; coplanar line dimensions; high-Q slow-wave transmission line; size 90 nm; stringent density requirements; test structures measurement; wavelength-reduction property; CMOS process; CMOS technology; Conductors; Fingers; Inductance; Q factor; Signal design; Testing; Transmission lines; Wavelength measurement; CMOS; area-reduction; quality factor; slow-wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
1-4244-0781-8
Electronic_ISBN
1-4244-0781-8
Type
conf
DOI
10.1109/ICMTS.2007.374481
Filename
4252431
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