• DocumentCode
    2887192
  • Title

    High-Q Slow-Wave Transmission Line for Chip Area Reduction on Advanced CMOS Processes

  • Author

    Lai, Ivan C H ; Fujishima, Minoru

  • Author_Institution
    Tokyo Univ., Chiba
  • fYear
    2007
  • fDate
    19-22 March 2007
  • Firstpage
    192
  • Lastpage
    195
  • Abstract
    A slow-wave transmission line (SWTL) structure has been presented in earlier works for advanced CMOS processes. This structure has a high quality factor and low attenuation. It is now shown that this structure also allows slow-waves to propagate which results in a short wavelength for chip area-reduction. It is shown in this work, using test structures measurements, that the wavelength-reduction property can be varied by the coplanar dimensions of the lines. This structure is also designed to satisfy the stringent density requirements of advanced CMOS processes. Test structures were fabricated using CMOS 90 nm process technology with measurements made up to 110 GHz.
  • Keywords
    CMOS integrated circuits; Q-factor; coplanar transmission lines; integrated circuit testing; slow wave structures; CMOS processes; chip area reduction; coplanar line dimensions; high-Q slow-wave transmission line; size 90 nm; stringent density requirements; test structures measurement; wavelength-reduction property; CMOS process; CMOS technology; Conductors; Fingers; Inductance; Q factor; Signal design; Testing; Transmission lines; Wavelength measurement; CMOS; area-reduction; quality factor; slow-wave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    1-4244-0781-8
  • Electronic_ISBN
    1-4244-0781-8
  • Type

    conf

  • DOI
    10.1109/ICMTS.2007.374481
  • Filename
    4252431