DocumentCode :
2887350
Title :
Power MOS Technology Invades Telecom
Author :
Blanchard, R.A. ; Tubis, Chris J. ; Buchanan, Walter
Author_Institution :
Siliconix, inc., 2201 Laurelwood Road, Santa Clara, California 95054
fYear :
1984
fDate :
4-7 Nov. 1984
Firstpage :
448
Lastpage :
454
Abstract :
The steady march of semiconductor device technology is most publicized in the high density, low-voltage digital area. Another area, power control and power conversion technology, is moving forward as rapidly, but in a less visible fashion. This paper discusses the progress being made in power MOS device and circuit technology and its impact on power control. The development of new devices and integrated circuits is emphasized. These devices include depletion-mode MOSPOWER transistors, MOS-gated 4-layer devices, and low on-resistance MOSPOWER transistors. Specific device applications in power conversion circuits are covered. Integrated circuits for use in Telecommunications Power Conversion systems are also discussed. One new I.C., a one-watt 48-to-5 volt monolithic S.M.P.S., is presented as an example of the types of circuits that are becoming available.
Keywords :
Communication industry; Costs; Electric resistance; Integrated circuit technology; MOS devices; MOSFETs; Power control; Power conversion; Telecommunications; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunications Energy Conference, 1984. INTELEC '84. International
Conference_Location :
New Orleans, LA, USA
Type :
conf
DOI :
10.1109/INTLEC.1984.4794164
Filename :
4794164
Link To Document :
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