DocumentCode :
2887378
Title :
From MOSFET Matching Test Structures to Matching Data Utilization: Not an Ordinary Task
Author :
Cathignol, A. ; Bordez, Samuel ; Rochereau, Krysten ; Ghibaudo, Gérard
Author_Institution :
STMicroelectron., Crolles
fYear :
2007
fDate :
19-22 March 2007
Firstpage :
230
Lastpage :
233
Abstract :
Delivering mismatch data that reflect design reality is a real challenge. Indeed, from test structures to final data utilization, many steps can be the source of distortion. The first possible source of distortion is linked to the differences in terms of environment and spacing that might exist between test structure transistors and circuit transistors. The second potential source of distortion is related to the measurements and extraction that can both add extra mismatch. Finally, the data treatment and utilization can constitute other error sources. In this paper, thanks to results from various test structures and device types, the main sources of distortion are pointed out in order to help to set up a reliable chain from matching test structures to matching data utilization.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; semiconductor device testing; MOSFET matching test structures; circuit transistors; data treatment; data utilization matching; design reality; distortion source; environmental terms; error sources; spacing terms; test structure transistors; Availability; Circuit testing; Data mining; Degradation; Distortion measurement; MOSFET circuits; Microelectronics; Probes; Semiconductor device testing; System testing; MOSFET; active extensions; correlations; matching; metal coverage; mismatch; probe resistance; spacing; test structures;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
Type :
conf
DOI :
10.1109/ICMTS.2007.374490
Filename :
4252440
Link To Document :
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