Title :
Femtosecond laser-induced self-ordered nanostructures in semiconducting 4H-SiC
Author :
Makin, V.S. ; Makin, R.S. ; Silantjeva, I.A.
Author_Institution :
Res. Inst. for Complex Testing of Opto-Electron. Devices, Sosnovy Bor, Russia
Abstract :
The experimental results causing the trench of subwavelength nanostructures formation in semiconductor´s 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductor´s cylindrical rode metallization.
Keywords :
high-speed optical techniques; laser beam effects; metallisation; nanofabrication; nanostructured materials; polaritons; silicon compounds; surface plasmons; surface treatment; wide band gap semiconductors; SiC; cylindrical surface plasmon polaritons; femtosecond beam path; femtosecond laser-induced self-ordered nanostructures; laser-induced material damage; semiconductor cylindrical rode metallization; semiconductor surface; subwavelength nanostructures; universal polariton model; wave vectors; Laser beams; Laser excitation; Laser modes; Nanostructures; Periodic structures; Semiconductor lasers; Ultrafast optics;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-6994-9
DOI :
10.1109/LFNM.2010.5624175
