A novel Ir/IrO/sub 2//Pt-PZT-Pt/IrO/sub 2//Ir capacitor for a highly reliable mega-scale FRAM

Author

Dongjin Jung ; Hyunho Kim ; Yoonjong Song ; Nakwon Jang ; Bonjae Koo ; Sungyung Lee ; Soonoh Park ; Yungwook Park ; Kinam Kim

Author_Institution

Technol. Dev., Samsung Electron. Co., Kyungki, South Korea

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

801

Lastpage

804

Abstract

A novel Ir/IrO/sub 2//Pt-PZT-Pt/IrO/sub 2//Ir capacitor is proposed for a highly reliable mega-scale FRAM. It was observed that charge degradation in retention test depends on the condition of the interface between top electrode and PZT thin film in ferroelectric capacitor. Nonvolatile polarization value of the novel capacitor after the retention acceleration is 4.7 times larger than that of Ir/IrO/sub 2/-PZT-Pt/IrO/sub 2//Ir capacitor. The novel Pt-inserted capacitor shows a great endurance up to 10/sup 11/ fatigue cycles. The 4 Mb FRAM device with Ir/IrO/sub 2//Pt-PZT-Pt/IrO/sub 2//Ir capacitor has a wide sensing window of 90 fC even after baking at 125/spl deg/C for 88 hours.

Keywords

fatigue testing; ferroelectric capacitors; ferroelectric storage; integrated circuit reliability; iridium; iridium compounds; lead compounds; platinum; 125 degC; 4 Mbit; 88 h; Ir-IrO/sub 2/-Pt-PZT-Pt-IrO/sub 2/-Ir; Ir-IrO2-Pt-PbZrO3TiO3-Pt-IrO2-Ir; baking; charge degradation; endurance; fatigue cycles; ferroelectric capacitor; mega-scale FRAM; nonvolatile polarization value; retention acceleration; retention test; sensing window; top electrode; Capacitors; Degradation; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904439

Filename

904439