Title :
RF-distortion in deep-submicron CMOS technologies
Author :
van Langevelde, R. ; Tiemeijer, L.F. ; Havens, R.J. ; Knitel, M.J. ; Ores, R.F.M. ; Woerlee, P.H. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted.
Keywords :
CMOS integrated circuits; UHF integrated circuits; VLSI; doping profiles; integrated circuit modelling; semiconductor device models; 0.18 micron; ITRS-roadmap; MOSFETs; RF distortion behaviour; compact MOSFET model; deep-submicron CMOS technologies; oxide thickness; substrate doping; technology scaling; wireless RF applications; CMOS technology; Distortion measurement; Doping; Laboratories; Linearity; MOSFETs; Radio frequency; Semiconductor device modeling; Semiconductor process modeling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904440
