Title :
The construction and evaluation of behavioral models for microwave devices based on time-domain large-signal measurements
Author :
Schreurs, D. ; Wood, J. ; Tufillaro, N. ; Usikov, D. ; Barford, L. ; Root, D.E.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Abstract :
We present a new procedure for creating nonlinear behavioral models of microwave devices, based on techniques developed in time-series analysis. We illustrate this procedure by creating a model for a HEMT device. Large-signal time-domain microwave measurements are used to generate the time-series data of the terminal currents and voltages. The dynamical model of the HEMT is defined by fitting multivariate polynomials to the terminal voltages and their higher-order derivatives. The model accurately predicts DC, small-signal, and large-signal behavior.
Keywords :
high electron mobility transistors; microwave field effect transistors; microwave measurement; polynomials; semiconductor device measurement; semiconductor device models; time-domain analysis; HEMT device; behavioral models; dynamical model; large-signal behavior; large-signal time-domain microwave measurements; multivariate polynomials; small-signal behavior; terminal currents; terminal voltages; time-series analysis; Current measurement; HEMTs; Microwave devices; Microwave generation; Microwave measurements; Microwave theory and techniques; Polynomials; Time domain analysis; Time series analysis; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904443
