Title :
Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers
Author :
Shulika, Oleksiy V. ; Sukhoivanov, Igor A. ; Klymenko, Mykhailo V. ; Safonov, Ivan M. ; Lucio, Jose A Andrade ; Perez, Arturo Garcia ; Rojas-Laguna, Roberto
Author_Institution :
Photonics Lab., Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
Abstract :
Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency among OPSDLs and provides high values of the output power.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical pumping; quantum well lasers; surface emitting lasers; wave functions; GaAs-AlGaAs; band engineering; complex asymmetric multiple quantum wells; conversion efficiency; effective carrier transport; electronic confinement; optical gain; optically pumped semiconductor disk lasers; wave function engineering; Laser excitation; Pump lasers; Radiative recombination; Tunneling; Vertical cavity surface emitting lasers; GaAs/AlGaAs; OPSDL; Optically-pumped semiconductor disk lasers; VEC-SEL; band diagram; vertical external-cavity surface-emitting lasers; wave function engineering;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-6994-9
DOI :
10.1109/LFNM.2010.5624179
