Extraction of Self-Heating Free I-V Curves Including the Substrate Current of PD SOI MOSFETs

Author

Chen, Qiang ; Wu, Zhi-Yuan ; Su, Richard Y K ; Goo, Jung-Suk ; Thuruthiyil, Ciby ; Radwin, Martin ; Subba, Niraj ; Suryagandh, Sushant ; Ly, Tran ; Wason, Vineet ; An, Judy X. ; Icel, Ali B.

Author_Institution

Adv. Micro Devices, Sunnyvale

fYear

2007

fDate

19-22 March 2007

Firstpage

272

Lastpage

275

Abstract

A new methodology is proposed to extract self-heating free I-V curves, including the substrate current, of SOI MOSFETs based on triple-temperature, regular DC measurement. It is verified to be accurate with Hspice simulations and suitable for SPICE model parameter extraction. It is also demonstrated that extraction of self-heating free I-V curves is not only desired for efficient SPICE model generation, but also required to accurately capture the true temperature dependences in the models.

Keywords

MOSFET; SPICE; electric current; partial discharges; quality assurance; semiconductor device models; silicon-on-insulator; thermal conductivity; Hspice simulations; PD SOI MOSFET; SPICE model parameter extraction; regular DC measurement; self-heating free I-V curves extraction; substrate current; temperature dependency; Current measurement; Curve fitting; MOSFETs; Parameter extraction; Pulse measurements; SPICE; Semiconductor device modeling; Temperature dependence; Thermal resistance; Voltage; Compact modeling; SOI; self-heating; substrate current;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374498

Filename

4252448