Title :
New yield models for DSM manufacturing
Author :
Fei, Y. ; Simon, P. ; Maly, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
A set of new yield models has been proposed and evaluated. These models use yield-relevant design attributes instead of traditionally applied die or critical areas. In conducted analysis, comparison of yield modeling accuracy to the well-known models was made. The new models are useful in DSM manufacturing and the design domain.
Keywords :
ULSI; design for manufacture; integrated circuit modelling; integrated circuit yield; DSM manufacturing; conducted analysis; design domain; modeling accuracy; yield models; yield-relevant design attributes; Fitting; Manufacturing processes; Parameter estimation; Pulp manufacturing; Reactive power; Semiconductor device manufacture; Semiconductor device modeling; Virtual manufacturing; Yield estimation;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904449
