Cu single damascene interconnects with plasma-polymerized organic polymers (k=2.6) for high-speed, 0.1 /spl mu/m CMOS devices

For high-speed CMOS devices, triple-layered Cu single damascene interconnects (SDI) with Cu-via plugs are fabricated in hybrid dielectric films of plasma-polymerized divinylsiloxan benzocyclobuten film (p-BCB: k=2.6) and p-CVD SiO/sub 2/. No degradation of O.1 /spl mu/m MOSFETs is observed after the full interconnect integration through MOCVD-Cu filling and pad-scanning, local-CMP for Cu polish. The stacked Cu-pads in the high modulus p-BCB film (19Gpa) withstand sever mechanical impact during Al wire bonding. The 0.08 /spl mu/m CMOS transmitter, which consists of 32:8 pre-multiplexer (MUX), 8B10B encoder, 10:1 MUX and DATA driver, is obtained successfully to generate high-speed serial signals up to 6 Gb/s. This fabrication process is the key to obtaining high-speed CMOS devices with low-k/Cu interconnects.