Title :
A 60ns 4Mb DRAM in a 300mil DIP
Author :
Sumi, Takuya ; Taniguchi, Takafumi ; Kishimoto, Mikio ; Hirano, Harutoyo ; Kuriyama, H. ; Nishimoto, Takuya ; Oishi, H. ; Tetakawa, S.
Author_Institution :
Matsushita Kyoto Research Laboratory, Device Development Department, Kyoto, Japan
Keywords :
Capacitance; Content addressable storage; Decoding; Electronics packaging; Personnel; Plastics; Power dissipation; Random access memory; Testing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157106
