DocumentCode :
2887701
Title :
Silicon single-electron CCD
Author :
Fujiwara, A. ; Takahashi, Y.
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
866
Lastpage :
868
Abstract :
Single-electron (SE) devices have been attracting much attention because of their low power consumption and potential for novel functions based on the manipulation of a single charge. Silicon-on-insulator (SOI) wafers are the most feasible material for fabricating SE devices since Si nanostructures can be implemented by the nanolithography technique. We have already reported SE transistors, SE memories and coupled-island SE devices, which were fabricated by means of pattern-dependent oxidation (PADOX). Nevertheless, the ultimate operation, the manipulation of a single charge, such as in a SE pump, has not yet been realized in Si devices and remains a future subject. Here, we report a novel type of SE device, an ultrasmall charge-coupled device (CCD) on a SOI wafer. The fabricated prototype can transfer a single hole like a conventional CCD. We also demonstrate a new method of storing holes and sensing them on the level of a single charge.
Keywords :
charge-coupled devices; electron beam lithography; elemental semiconductors; nanotechnology; oxidation; silicon; silicon-on-insulator; single electron transistors; SOI wafers; Si; coupled-island SE devices; hole storing; nanolithography technique; pattern-dependent oxidation; power consumption; single charge level; single-electron CCD; ultrasmall charge-coupled device; Charge carrier processes; Charge coupled devices; Current measurement; Electrons; Lighting; MOSFETs; Oxidation; Silicon; Voltage; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904455
Filename :
904455
Link To Document :
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