Title :
Ultra-low-voltage operation: Device perspective
Author :
Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.
Keywords :
MOSFET; low-power electronics; tunnel transistors; FinFET; TFET; fully-depleted transistors; transistor variability; tunnel FET; ultralow-voltage operation; Fluctuations; Logic gates; MOSFETs; Random access memory; Resource description framework; CMOS; SRAM; fully depleted SOI; tunnel FET; variability;
Conference_Titel :
Low Power Electronics and Design (ISLPED) 2011 International Symposium on
Conference_Location :
Fukuoka
Print_ISBN :
978-1-61284-658-3
Electronic_ISBN :
Pending
DOI :
10.1109/ISLPED.2011.5993605
