Title :
Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications
Author :
Santini, Thomas ; Sebastien, Morand ; Florent, Miller ; Phung, Luong-Viet ; Allard, Bruno
Author_Institution :
EADS Innovation Works, Suresnes, France
Abstract :
With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.
Keywords :
MOSFET; avionics; semiconductor device reliability; silicon compounds; MOSFET; SiC; electrical aircraft; gate oxide reliability assessment; high temperature aeronautic applications; power electronic components; power switches; qualification process; Aircraft; Human computer interaction; Logic gates; MOSFET; Monitoring; Reliability; Voltage measurement; Accelerated Aging Tests; Acceleration Factors; Gate Oxide; MOSFET; Reliability Assessment; Silicon Carbide;
Conference_Titel :
ECCE Asia Downunder (ECCE Asia), 2013 IEEE
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4799-0483-9
DOI :
10.1109/ECCE-Asia.2013.6579125
